deconvoluted si 2p photoelectron spectra of ultra thin sio2 film with fitxps method
Authors
abstract
the main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. the obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental spectra. the up – and down- spin roles are considered for studying the nano structural properties of bulk, interface and surface states of ultra thin film, down to 2 nm and also appealing to the field of surface science. the obtained results show the above states can be determined and distinguished with spin orientations in fitxps method.
similar resources
Deconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
full textA polycrystalline SiO2 colloidal crystal film with ultra-narrow reflections.
This work reported a high quality photonic crystal film with an ultra-narrow photonic bandgap obtained via a chemical synthetic route. The bandgap is much narrower than that of traditional colloidal crystals, which makes the film qualified for use in optical devices. The narrow PBG originates from not only the high crystallinity and uniform orientations of microcrystals within the film but also...
full textMorphology of Thin Aluminum Film Grown by DC Magnetron Sputtering onto SiO2 on Si(100) Substrate
The morphology and grown mechanism of aluminum films from 3nm to 30nm in thickness onto thermal SiO2 on Si(100) substrates have been studied by atomic force microscopy and TCR measurement. The thin films prepared by dc magnetron sputtering at 450°C is composed of islands of aluminum. The island density, distribution of island size, height, and shape are studied.
full textAssessment of Ultra-Thin SiO2 Film Thickness Measurement Precision by Ellipsometry
The ellipsometric film thickness measurement precision for equivalent oxide thickness as prescribed by the International Technology Roadmap for Semiconductors is quite high. Although short-term precision on a single ellipsometric instrument can be quite high, deviations of measured film thickness from instrument-to-instrument and from lab-to-lab for short-term and long-term periods of time need...
full textInterface effects in the Ni 2p x-ray photoelectron spectra of NiO thin films grown on oxide substrates
We report the Ni 2p x-ray photoelectron spectra of NiO thin films grown on different oxide substrates, namely, SiO2, Al2O3, and MgO. The main line of the Ni 2p spectra is attributed to the bulk component, and the shoulder at 1.5 eV higher binding energies to the surface component. The spectra of the NiO thin films show strong differences with respect to that of bulk NiO. The energy separation b...
full textOptical and structural properties of Si nanocrystals in SiO2 film
Silicon nanocrystals (Si-nc) embedded in a SiO2 matrix is a promising system for siliconbased photonics. We studied optical and structural properties of Si-rich silicon oxide SiOx (x < 2) films annealed in a furnace at temperatures up to 1200 °C and containing Si-nc. The measured optical properties of SiOx films are compared with the values estimated by using the effective medium approximation ...
full textMy Resources
Save resource for easier access later
Journal title:
journal of nanostructuresPublisher: university of kashan
ISSN 2251-7871
volume 1
issue 1 2012
Hosted on Doprax cloud platform doprax.com
copyright © 2015-2023